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Kelly Clifford

P-type Boron-doped 200nm SiO2 thermal oxide wafer: For Quality And Versatility

Among the important materials in scientific research and material science are precision tools and materials. Two of these materials, which have quite a number of advantages, are laboratory borosilicate glass beads 3mm and P-type boron-doped 200nm SiO2 thermal oxide wafers. This blog explores various benefits of such laboratory essentials along with their applications in different fields.


Borosilicate glass beads have a host of applications in the laboratory due to the inherent strength and multi-dimensional applicability of these beads. Borosilicate glass is highly resistant to chemicals; hence, these beads work well in highly chemical environments. In other words, they can easily bear the presence of acids, bases, and various organic solvents without disintegrating or undergoing reactions.

P-type Boron-doped 200nm SiO2 thermal oxide wafer
P-type Boron-doped 200nm SiO2 Thermal Oxide Wafer

One of the most outstanding properties of borosilicate glass beads is their thermal stability; they are resistant to thermal shock. They will withstand very high temperatures and very rapid changes in temperature. It is an important property in heating and cooling cycles, like in thermal baths or heat transfer studies.


Due to the hardness and durability, such beads made of borosilicate glass will be abrasion-resistant, and resistant to mechanical wear. Thus, they can provide long service life even in continuous use during the grinding process or in mixing applications.


Laboratory borosilicate glass beads 3mm are manufactured strictly within dimensional tolerances, making every bead essentially identical, thus assuring the uniformity of experimental conditions. This uniformity is very important for reproducibility in scientific experiments and for obtaining consistent results in chromatography and particle size analyses.


High-Quality Insulation


P-type boron-doped 200nm SiO2 thermal oxide wafer adds controlled impurities to the silicon wafer to provide positive charge carriers (holes). Such controlled doping is central in coming up with semiconductor devices such as transistors and diodes, in which definite electrical properties are necessary.


The thermal oxide wafers have brilliant thermal stability; thus, they can stay intact during the elevated temperature process steps involved in semiconductor manufacturing. Such stability ensures the integrity of the wafer and hence the reliability of the manufactured devices.

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