Thermal oxidation is the result of exposing Silicon thermal oxide wafer to a combination of oxidizing agents and heat to make a layer of silicon dioxide. This layer is most commonly made with hydrogen and oxygen gas, although any halogen gas can be utilized.
Silicon dioxide growth takes place on SiO2 thermal oxide wafers in ambient air to about 20 angstroms thick; however, for most specifications thermal oxide growth uses a heat source in order to catalyze this reaction and create oxide layers up to 25000 Angstorms.
There are numerous applications for thermal oxidation on silicon wafers, and both require growth of oxygen on the surface of the water. This differs from CVD applications, where the oxide layer is deposited on top of the wafer.
Growth rate of silicon thermal oxide wafer
The preliminary growth of the oxide is limited by the rate at which the chemical retort takes place. After the first 100 to 300 Angstroms of oxide has been produced, the growth rate of oxide layer will be limited principally by the rate of diffusion of the oxidant through the oxide layers.
Specifications
· The thickness range of Silicon thermal oxide wafers 500 Angstroms
· Thickness tolerance is targeted at +/-5 %
· Within wafer uniformity is +/-3% or better
· Wafer to wafer uniformity is +/-5% or better
· Wafers size are 50mm, 100mm, 125mm, 150mm, 200mm
· Wafer thickness is 100nm to 2000nm
· Temperature ranges from 950 degree Celsius to 1050 degree Celsius
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